| PART |
Description |
Maker |
| PD50F4 |
FRD MODULE - 50A/400V/trr:80nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PC50F5 |
FRD MODULE 50A/500V/trr:90nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PC100F6 |
FRD MODULE 100A/600V/trr:110nsec
|
Nihon Inter Electronics Corporation
|
| PD300F12 |
FRD MODULE - 300A/1200V/trr:250nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PH270F2 |
FRD MODULE 270A/200V/trr:150nsec
|
NIEC[Nihon Inter Electronics Corporation]
ETC[ETC]
|
| P2H30F6 |
FRD MODULE 30A/600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PRHMB50A6 |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| 6MBP50VAA060-50 |
IGBT MODULE (V series) 600V / 50A / IPM
|
Fuji Electric
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| IRFP26N60LPBF |
HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )
HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mヘ , Trr typ. = 170ns , ID = 26A )
|
International Rectifier
|
